VS-GB150TH120N www.vishay.com vishay semiconductors revision: 10-jun-15 1 document number: 94760 for technical questions within your region: diodesamericas@vishay.com , diodesasia@vishay.com , diodeseurope@vishay.com this document is subject to change without notice. the products described herein and this document are subject to specific disclaimers, set forth at www.vishay.com/doc?91000 molding type module igbt, 2-in-1 package, 1200 v and 150 a features ?low v ce(on) spt + igbt technology ? 10 s short circuit capability ?v ce(on) with positive temperature coefficient ? maximum junction temperature 150 c ? low inductance case ? fast and soft reverse re covery antiparallel fwd ? isolated copper baseplate using dcb (direct copper bonding) technology ? material categorization: fo r definitions of compliance please see www.vishay.com/doc?99912 typical applications ? inverter for motor drive ? ac and dc servo drive amplifier ? uninterruptible power supply (ups) description vishays igbt power module provides ultra low conduction loss as well as short circuit ru ggedness. it is designed for applications such as ge neral inverters and ups. note (1) repetitive rating: pulse width limited by maximu m junction temperature. product summary v ces 1200 v i c at t c = 80 c 150 a v ce(on) (typical) at i c = 150 a, 25 c 1.9 v speed 8 khz to 30 khz package double int-a-pak circuit half bridge double int-a-pak absolute maximum ratings (t c = 25 c unless otherwise noted) parameter symbol test conditions max. units collector to em itter voltage v ces 1200 v gate to emi tter voltage v ges 20 collector current i c t c = 25 c 300 a t c = 80 c 150 pulsed collector current i cm (1) t p = 1 ms 300 diode continuous forward current i f t c = 80 c 150 diode maximum forward current i fm t p = 1 ms 300 maximum power dissipation p d t j = 150 c 1008 w short circuit withstand time t sc t j = 125 c 10 s rms isolation voltage v isol f = 50 hz, t = 1 min 2500 v
VS-GB150TH120N www.vishay.com vishay semiconductors revision: 10-jun-15 2 document number: 94760 for technical questions within your region: diodesamericas@vishay.com , diodesasia@vishay.com , diodeseurope@vishay.com this document is subject to change without notice. the products described herein and this document are subject to specific disclaimers, set forth at www.vishay.com/doc?91000 igbt electrical specifications (t c = 25 c unless otherwise noted) parameter symbol test conditions min. typ. max. units collector to emitte r breakdown voltage v (br)ces t j = 25 c 1200 - - v collector to em itter voltage v ce(on) v ge = 15 v, i c = 150 a, t j = 25 c - 1.90 2.35 v ge = 15 v, i c = 150 a, t j = 125 c - 2.10 - gate to emitter threshold voltage v ge(th) v ce = v ge , i c = 6 ma, t j = 25 c 5.0 6.2 7.0 collector cut-off current i ces v ce = v ces , v ge = 0 v, t j = 25 c - - 5.0 ma gate to emitter leakage current i ges v ge = v ges , v ce = 0 v, t j = 25 c - - 400 na switching char acteristics parameter symbol test conditions min. typ. max. units turn-on delay time t d(on) v cc = 600 v, i c = 150 a, r g = 4.7 ? , ? v ge = 15 v, t j = 25 c - 336 - ns rise time t r -75- turn-off delay time t d(off) - 346 - fall time t f - 182 - turn-on switching loss e on -7.25- mj turn-off switching loss e off -9.30- turn-on delay time t d(on) v cc = 600 v, i c = 150 a, r g = 4.7 ? , ? v ge = 15 v, t j = 125 c - 346 - ns rise time t r -77- turn-off delay time t d(off) - 389 - fall time t f - 322 - turn-on switching loss e on -9.95- mj turn-off switching loss e off - 16.0 - input capacitance c ies v ge = 0 v, v ce = 25 v, f = 1.0 mhz - 11.0 - nf output capacitance c oes -0.80- reverse transfer capacitance c res -0.52- sc data i sc t sc ? 10 s, v ge = 15 v, t j = 125 c, ? v cc = 900 v, v cem ? 1200 v - 890 - a internal gate resistance r gint -1.5- ? stray inductance l ce - - 20 nh module lead resistance, terminal to chip r cc+ee t c = 25 c - 0.35 - m ? diode electrical specifications (t c = 25 c unless otherwise noted) parameter symbol test cond itions min. typ. max. units diode forward voltage v f i f = 150 a t j = 25 c - 1.80 2.20 v t j = 125 c - 1.85 - diode reverse recovery charge q rr i f = 150 a, v r = 600 v, ? di/dt = -2360 a/s, ? v ge = -15 v t j = 25 c - 16.2 - c t j = 125 c - 26.6 - diode peak reverse recovery current i rr t j = 25 c - 138 - a t j = 125 c - 166 - diode reverse recovery energy e rec t j = 25 c - 7.48 - mj t j = 125 c - 13.4 -
VS-GB150TH120N www.vishay.com vishay semiconductors revision: 10-jun-15 3 document number: 94760 for technical questions within your region: diodesamericas@vishay.com , diodesasia@vishay.com , diodeseurope@vishay.com this document is subject to change without notice. the products described herein and this document are subject to specific disclaimers, set forth at www.vishay.com/doc?91000 fig. 1 - igbt typical output characteristics fig. 2 - igbt typical transfer characteristics fig. 3 - igbt switching loss vs. i c fig. 4 - igbt switching loss vs. r g thermal and mechanical specifications parameter symbol test co nditions min. typ. max. units operating junction temperature range t j - - 150 c storage temperature range t stg -40 - 125 junction to case igbt r thjc --0.124 k/w diode - - 0.174 case to sink r thcs conductive grease applied - 0.035 - mounting torque power terminal screw: m6 2.5 to 5.0 nm mounting screw: m6 3.0 to 5.0 weight 300 g 0 100 150 50 200 250 300 01 0.5 2 1.5 2.5 3.5 3 i c (a) v ce (v) t j = 25 c t j =125 c v g e = 15 v 57 69 8101213 11 i c (a) v g e (v) 0 100 150 50 200 250 300 t j =125 c t j = 25 c v ce = 20 v i c ( a ) e (mj) 0 0 5 10 15 20 25 35 40 30 50 150 100 200 250 300 v g e = 15 v t j = 125 c r g = 4.7 v cc = 600 v r g ( ) e (mj) 0 10 20 30 40 50 70 80 60 01015 5 202530354045 v g e = 15 v t j = 125 c i c = 150 a v cc = 600 v e off e on
VS-GB150TH120N www.vishay.com vishay semiconductors revision: 10-jun-15 4 document number: 94760 for technical questions within your region: diodesamericas@vishay.com , diodesasia@vishay.com , diodeseurope@vishay.com this document is subject to change without notice. the products described herein and this document are subject to specific disclaimers, set forth at www.vishay.com/doc?91000 fig. 5 - rbsoa fig. 6 - igbt transient thermal impedance fig. 7 - diode typical forward characteristics fig. 8 - diode switching loss vs. i f 0 50 100 150 200 250 300 350 0 300 900 600 1200 1500 v ce (v) i c (a) v g e = 15 v t j = 125 c r g = 4.7 i c , module t (s) z thjc (k/w) 10 0 10 -1 10 -2 10 -3 10 0 10 1 10 -1 10 -2 10 -3 i g bt 0 100 150 50 200 250 300 01 0.5 2 1.5 2.5 3.5 3 i f (a) v f (v) t j = 25 c t j =125 c 0 5 10 15 20 25 30 0 50 100 150 200 250 300 i f (a) e (mj) v g e = - 15 v t j = 125 c r g = 4.7 v cc = 600 v
VS-GB150TH120N www.vishay.com vishay semiconductors revision: 10-jun-15 5 document number: 94760 for technical questions within your region: diodesamericas@vishay.com , diodesasia@vishay.com , diodeseurope@vishay.com this document is subject to change without notice. the products described herein and this document are subject to specific disclaimers, set forth at www.vishay.com/doc?91000 fig. 9 - diode switching loss vs.r g fig. 10 - diode transient thermal impedance circuit configuration 0 510152025 4045 35 30 0 2.5 5 7.5 10 12.5 15 r g () e (mj) v g e = - 15 v t j = 125 c i c = 150 a v cc = 600 v e rec t (s) z thjc (k/w) diode 10 0 10 1 10 -1 10 -2 10 -3 10 0 10 -1 10 -2 1 6 7 3 2 5 4 links to related documents dimensions www.vishay.com/doc?95525
outline dimensions www.vishay.com vishay semiconductors revision: 27-may-13 1 document number: 95525 for technical questions within your region: diodesamericas@vishay.com , diodesasia@vishay.com , diodeseurope@vishay.com this document is subject to change without notice. the products described herein and this document are subject to specific disclaimers, set forth at www.vishay.com/doc?91000 double int-a-pak dimensions in millimeters (inches) mounting depth max. 11 3-m6 16 2.8 x 0.5 31 0.5 30.5 0.5 7.2 0.6 61.4 30 48 0.4 35.4 15 0.4 27 0.4 23 0.3 26 6 28 0.3 93 0.4 106.4 6226 ? 6.4 0.2 28 0.3 20.1 123
legal disclaimer notice www.vishay.com vishay revision: 13-jun-16 1 document number: 91000 disclaimer ? all product, product specifications and data ar e subject to change with out notice to improve reliability, function or design or otherwise. vishay intertechnology, inc., its affiliates, agents, and employee s, and all persons acting on it s or their behalf (collectivel y, vishay), disclaim any and all liability fo r any errors, inaccuracies or incompleteness contained in any datasheet or in any o ther disclosure relating to any product. vishay makes no warranty, representation or guarantee regarding the suitability of th e products for any particular purpose or the continuing production of any product. to the maximum extent permitted by applicable law, vi shay disclaims (i) any and all liability arising out of the application or use of any product , (ii) any and all liability, including without limitation specia l, consequential or incidental damages, and (iii) any and all implied warranties, includ ing warranties of fitness for particular purpose, non-infringement and merchantability. statements regarding the suitability of products for certain types of applicatio ns are based on vishays knowledge of typical requirements that are often placed on vishay products in generic applications. such statements are not binding statements about the suitability of products for a particular applic ation. it is the customers responsibility to validate tha t a particular product with the prope rties described in the product sp ecification is suitable for use in a particular application. parameters provided in datasheets and / or specifications may vary in different ap plications and perfor mance may vary over time. all operating parameters, including ty pical parameters, must be va lidated for each customer application by the customer s technical experts. product specifications do not expand or otherwise modify vishays term s and conditions of purchase, including but not limited to the warranty expressed therein. except as expressly indicated in writing, vishay products are not designed for use in medical, life-saving, or life-sustaining applications or for any other application in which the failure of the vishay product could result in personal injury or death. customers using or selling vishay product s not expressly indicated for use in such applications do so at their own risk. please contact authorized vishay personnel to obtain writ ten terms and conditions rega rding products designed for such applications. no license, express or implied, by estoppel or otherwise, to any intellectual property rights is gran ted by this document or by any conduct of vishay. product names and markings noted herein may be trademarks of their respective owners.
|
